Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs
作者： M. Dutoit , P. Letourneau , J. Mi , N. Novkovski , J. Manthey
DOI: 10.1149/1.2221086
关键词:
摘要: We optimized thin reoxidized nitrided SiO 2 (ROXNOX) films produced by RTP on the basis of a careful analysis requirements EEPROMs. The influence oxidation, nitridation, and reoxidation parameters charge-trapping breakdown during constant current stress was studied in detail. show that very light nitridation gives maximum nitrogen concentration at Si/SiO interface largest increase endurance under high-field stress. physical these results is discussed
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