Millimeter-wave diode-grid phase shifters
作者： W.W. Lam , C.F. Jou , H.Z. Chen , K.S. Stolt , N.C. Luhmann
DOI: 10.1109/22.3610
关键词:
摘要: Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected a liquid-crystal technique, and the bad removed an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure reflection coefficient of grids. Phase shift 70 degrees 7-dB loss obtained at 93 GHz when bias grid changed from -3 V 1 V. simple transmission-line model, together measured low-frequency parameters for diodes, shown predict performance over entire capacitive range as well complete reactive tuning provided by reflector behind grid, wide frequencies form 33 141 GHz. This shows model can be used design electronic beam-steering array its performance. An made pair using state-of-the-art 5- Omega series resistances would 1.4 dB 90 >
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