Ideal anodization of silicon
作者： Zain Yamani , W. Howard Thompson , Laila AbuHassan , Munir H. Nayfeh
DOI: 10.1063/1.119185
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摘要: Silicon has been anodized such that the porous layer is passivated with a homogeneous stretching phase by incorporating H2O2 in anodization mixture. Fourier transform infrared spectroscopy measurements show Si–H mode oriented perpendicular to surface at ∼2100 cm−1 dominates spectrum negligible contribution from bending modes 600–900 cm−1 region. Material analysis using Auger electron shows samples have very little impurities, and luminescent thin (5–10 nm). Scanning microscopy smoother features smaller than those of conventional samples.
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