Effects of electron-electron scattering on impurity resistivity

摘要: All important theories of impurity resistivity each give one two results. These results coincide for zero temperature but differ higher temperatures. The electron-electron scattering does not a direct contribution to the resistivity. However, it has indirect effect. It affects occupation numbers electron states and thereby modifies scattering. discussed are both obtained in absence explicit solution Boltzmann equation gives In limit strong second result is obtained; interaction leads full thermalisation centre-of-mass system carriers. Thus extreme limits from varying strength authors make realistic estimate scattering-rate calculate doped GaAs.