Nonlinear electronic transport in semiconductor systems with two types of carriers: Application to GaAs.

摘要: The balance-equation approach for hot-electron transport previously developed is extended to systems composed of two groups carriers, each different effective mass. This the simplest model a real band structure multivalley semiconductor. separation center-of-mass (c.m.) motion from relative electrons incomplete due possibility exchange particle number between and thus taken into account in Liouville equation density matrix. General expressions rates change c.m. momenta, electron system energies, numbers are obtained. These equations their classical forms used calculation high-field steady-state GaAs calculated results show reasonably good agreement with experiments.