Semiconductor memory device and manufacturing method of the same
作者： Katsuhiko Tamura , Naoko Otani , Yukari Imai
DOI:
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摘要: A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at region through which electrons move in data writing and erasing operations. In the device, nitride films having thickness larger than that first are formed on drain impurity diffusion layer source to surround film. floating electrode has opposite ends protruded over films.
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