Plug filling without step-height difference for dual damascene process
作者： Jen-Chieh Shih
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摘要: A method for manufacturing a dual damascene structure on semiconductor substrate is provided. The includes forming an insulator above the and patterning to include plurality of plug openings. plug-filler material used filling one or more openings extending insulator. portion can be removed by using reduced resist coating (RRC) solvent.
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