Oxidation Rate Effect on the Direction of Metal-Assisted Chemical and Electrochemical Etching of Silicon
作者： Zhipeng Huang , Tomohiro Shimizu , Stephan Senz , Zhang Zhang , Nadine Geyer
DOI: 10.1021/JP911121Q
关键词:
摘要: … by metal-assisted chemical etching is yet to be developed because metal-assisted chemical etching is … etching of Si (26) (eg, etching prefers to proceed along ⟨100⟩ directions in …
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