Ferromagnetism in ZnO Doped with Transition Metal Ions

摘要: Publisher Summary This chapter reviews the experimental results on transition metal doping of zinc oxide (ZnO) and current state theories for ferromagnetism. It is important to re-examine some earlier concepts spintronics devices, such as spin field-effect transistor, account presence strong magnetic field, which has deleterious effects. In these cases, device appears have no advantage relative conventional charge-control electronic analog. The most promising materials room temperature polarized light emission are expected be gallium nitride (GaN) ZnO, but progress realizing devices been disappointing. To date it difficult detect optical polarization in ZnO. short spin-relaxation time observed likely from Rashba effect. Possible solutions involve either cubic phase ZnO or use additional stressor layers create a larger spin-splitting order get structures look at alternative semiconductors fresh approaches.