Operation of a gated field emitter using an individual carbon nanofiber cathode
作者： M. A. Guillorn , A. V. Melechko , V. I. Merkulov , E. D. Ellis , C. L. Britton
DOI: 10.1063/1.1419038
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摘要: … Using the resist as an etch mask, the substrates were subjected to a CF4 /O2 reactive ion etch to pattern the Mo gate layer followed by a CHF3 /O2 SiO2 etch Fig. 1g to release the …
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