Modeling of electron elastic and inelastic scattering

摘要: The role of the form elastic and inelastic cross section in Monte Carlo simulations electron–solid scattering has been studied to understand processes whereby energy is deposited by electrons as they traverse thin films. Specifically we are interested these phenomena relate proximity effects electron‐beam lithography detection a Schottky diode with patterned absorber overlayer. Lithographic point line spread functions have measured three resist materials. We show that inclusion discrete events fast secondaries generated essential for matching simulation experiment. crucial determining shape 0.1–1 μm regime must be included model effects. Further, fitting function experiment allows accurate prediction dot applied dose thresholds well dimensional profiles. important loss in, transmission through, metallic For electron energies where film low, Mott provides more than screened Rutherford section.