Sub-0.1 μ electron-beam lithography for nanostructure development

摘要: This article discusses those factors that lead to resolvability in e-beam lithography. The primary tool of study is the simplex method linear optimization theory. Resist exposure characteristics can effectively be accounted for using a “minimum contrast” approach. technique does not require normally unexposed field. Feature linearity comparison experiments and boundary placement studies show measurable improvement with when compared dose scaling or feature resizing. While computational tractability significant issue, will rapidly assess whether small groups features are resolvable. In addition, points general rules applying modulation different classes features.