A flexible and efficient approach to E‐beam proximity effect correction—PYRAMID

摘要: Electron scattering in the resist causes blurring of written circuit features electron-beam (E-beam) lithography, which is referred to as proximity effect. As feature size a pattern continuously reduced an effort increase density, effect has become too prominent be ignored any more. Without proper correction effect, density and shapes that can fabricated would significantly limited especially for nanoscale patterns. A hierarchical approach, named PYRAMID, was proposed order develop flexible efficient method correction. It distinguishes itself from other methods it takes two-level approach exposure estimation modification shape and/or dose features. The exploits typical point spread function (PSF) E-beam lithographic process, attempts reduce computational requirement without degrading accuracy substantially. Through experiments simulation, been demonstrated PYRAMID potential practical method. Currently, being extended grayscale lithography nonrectangular