作者: A. Tripathi , Amit Kumar , F. Singh , D. Kabiraj , D.K. Avasthi
DOI: 10.1016/J.NIMB.2005.04.059
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摘要: Abstract Various types of scanning probe microscopy (SPM) techniques: atomic force (AFM) (contact and tapping in height amplitude mode), tunnelling (STM) conducting (C-AFM) are used for studying ion beam induced surface modifications, nanostructure/cluster formation disintegration polymers similar soft carbon based materials. In the present study, results studies on four materials, namely, (A) methyltriethoxysilane/phenyltriethoxysilane (MTES/PTES) gel, (B) triethoxisilane (TH) (C) highly oriented pyrolytic graphite (HOPG) bulk (D) fullerene (C 60 ) thin films discussed. case Si gels prepared from pre-cursors containing organic groups (MTES/PTES), hillocks observed at their size decreases 70 to 25 nm with increasing fluence, whereas, a gel stoichiometry SiO 1.25 H 1 , TH, an increases is observed. Hillocks also formed HOPG irradiated 120 MeV Au low craters re-organisation features higher fluence. C films, irradiation induces tracks, which attributed transformation insulating like carbon.