Influence of the composition on electrical properties of low-temperature ionic conductors in the Cu1 − x Ag x GeAsSe3 system
作者： O. L. Kheifets , N. V. Mel’nikova , A. L. Filippov , E. F. Shakirov , A. N. Babushkin
DOI: 10.1134/S1063783412080136
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摘要: The chalcogenides Cu1 − xAgxGeAsSe3 (x = 0.5, 0.8, 0.9) have been synthesized and their electrical properties studied at low temperatures. Compounds of this type are electron-ionic conductors with a mixed character conduction. It has shown that the substitution copper atoms for part silver in AgGeAsSe3 compound leads to decrease total conductivity, fraction ionic component significant increase polarization times, an temperature onset noticeable contribution (as compared electron contribution) transport, activation energy carriers.
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