Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

作者: T. Kinno , M. Tomita , T. Ohkubo , S. Takeno , K. Hono

DOI: 10.1016/J.APSUSC.2013.11.039

关键词:

摘要: Abstract 18O-enriched SiO2 thin film with the 16O:18O ratio of around 1:1 has been analyzed by laser-assisted atom probe tomography (LA-APT) using 343 nm-wavelength ultraviolet laser or 532 nm-wavelength green in order to investigate quantitativeness oxygen concentration determined LA-APT. No clear evidence for detecting 16O18O++ signals was found mass spectra, implying that peaks at mass/charge 16 and 18 are dominated O+, not O2++. The calculated elemental composition indicated significant loss LA-APT analysis SiO2.

参考文章(23)
Y.M. Chen, T Ohkubo, K Hono, Laser assisted field evaporation of oxides in atom probe analysis. Ultramicroscopy. ,vol. 111, pp. 562- 566 ,(2011) , 10.1016/J.ULTRAMIC.2010.12.013
M. Gilbert, W. Vandervorst, S. Koelling, A.K. Kambham, atom probe analysis of a 3D-finfet with high-k metal gate Ultramicroscopy. ,vol. 111, pp. 530- 534 ,(2011) , 10.1016/J.ULTRAMIC.2010.12.025
K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa, Dopant distributions in n-MOSFET structure observed by atom probe tomography. Ultramicroscopy. ,vol. 109, pp. 1479- 1484 ,(2009) , 10.1016/J.ULTRAMIC.2009.08.002
S. Duguay, M. Ngamo, P.F. Fazzini, F. Cristiano, K. Daoud, P. Pareige, Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate Thin Solid Films. ,vol. 518, pp. 2398- 2401 ,(2010) , 10.1016/J.TSF.2009.09.159
P. A. Ronsheim, M. Hatzistergos, S. Jin, Dopant measurements in semiconductors with atom probe tomography Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 28, ,(2010) , 10.1116/1.3242422
T. Kinno, H. Akutsu, M. Tomita, S. Kawanaka, T. Sonehara, A. Hokazono, L. Renaud, I. Martin, R. Benbalagh, B. Sallé, S. Takeno, Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography Applied Surface Science. ,vol. 259, pp. 726- 730 ,(2012) , 10.1016/J.APSUSC.2012.07.108
S. Pinitsoontorn, A. Cerezo, A. K. Petford-Long, D. Mauri, L. Folks, M. J. Carey, Three-dimensional atom probe investigation of boron distribution in CoFeB∕MgO∕CoFeB magnetic tunnel junctions Applied Physics Letters. ,vol. 93, pp. 071901- ,(2008) , 10.1063/1.2973045
P. Ronsheim, P. Flaitz, M. Hatzistergos, C. Molella, K. Thompson, R. Alvis, Impurity measurements in silicon with D-SIMS and atom probe tomography Applied Surface Science. ,vol. 255, pp. 1547- 1550 ,(2008) , 10.1016/J.APSUSC.2008.05.247
M. Bachhav, R. Danoix, F. Danoix, B. Hannoyer, S. Ogale, F. Vurpillot, Investigation of wüstite (Fe1−xO) by femtosecond laser assisted atom probe tomography Ultramicroscopy. ,vol. 111, pp. 584- 588 ,(2011) , 10.1016/J.ULTRAMIC.2010.11.023