A novel high performance die attach

作者: X.M. Xie , T.B. Wang , J.Z. Shi , R.Q. Ye , F. Stubhan

DOI: 10.1108/09540910010312456

关键词:

摘要: Au/In isothermal solidification technique was evaluated as an alternative method for high performance die attachment. Bonding could be achieved at temperatures between 250°C ‐ 3008C about five to ten seconds. The microstructures of the bonds were studied and their effects on reliability analysed. quality depends very much surface waviness substrate. For substrates, bonding successfully 3mm × dies, which is almost one order magnitude bigger than size achievable Au/Si eutectic bonding, show no obvious degradation after 2,800 cycles –55°C 125°C.

参考文章(7)
Yuji Hasumi, Lateral diffusion of In and formation of AuIn2 in Au‐In thin films Journal of Applied Physics. ,vol. 58, pp. 3081- 3086 ,(1985) , 10.1063/1.335808
J. Bjøntegaard, L. Buene, T. Finstad, O. Lønsjø, T. Olsen, Low temperature interdiffusion in Au/In thin film couples Thin Solid Films. ,vol. 101, pp. 253- 262 ,(1983) , 10.1016/0040-6090(83)90252-3
T. B. Wang, Z. Z. Shen, R. Q. Ye, X. M. Xie, F. Stubhan, J. Freytag, Die bonding with Au/In isothermal solidification technique Journal of Electronic Materials. ,vol. 29, pp. 443- 447 ,(2000) , 10.1007/S11664-000-0158-5
J. Z. Shi, X. M. Xie, F. Stubhan, J. Freytag, A Novel High Performance Die Attach for Ceramic Packages Journal of Electronic Packaging. ,vol. 122, pp. 168- 171 ,(2000) , 10.1115/1.483150
C.C. Lee, C.Y. Wang, G. Matijasevic, Au-In bonding below the eutectic temperature IEEE Transactions on Components, Hybrids, and Manufacturing Technology. ,vol. 16, pp. 311- 316 ,(1993) , 10.1109/33.232058
Leonard Bernstein, Semiconductor Joining by the Solid‐Liquid‐Interdiffusion (SLID) Process I . The Systems Ag‐In, Au‐In, and Cu‐In Journal of The Electrochemical Society. ,vol. 113, pp. 1282- 1288 ,(1966) , 10.1149/1.2423806