Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
作者： Yu-Chun Chen , Ting-Chang Chang , Hung-Wei Li , Shih-Ching Chen , Jin Lu
DOI: 10.1063/1.3457996
关键词:
摘要: This study investigates the effects of bias-induced oxygen adsorption on electrical characteristic instability zinc tin oxide thin film transistors in different ambient partial pressures. When pressure is largest, threshold voltages showed quickest increase but slowest recovery during stress phase and phase, respectively. finding corresponds to charge trapping time constant constant, which are extracted by fitting stretched-exponential equation exhibit a relationship with pressure. We suggest that gate bias reduces activation energy stress.
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