Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion
作者： Matthew C. Beard , Aaron G. Midgett , Mark C. Hanna , Joseph M. Luther , Barbara K. Hughes
DOI: 10.1021/NL101490Z
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摘要: Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG QDs with II argue there important differences photophysics between QDs. Our analysis demonstrates fundamental unit of energy required produce each a given QD is band gap energy. find efficiency multiplication process increases by at least 2 PbSe compared PbSe, while competition cooling favors factor 3 also demonstrate power conversion efficiencies solar cells exhibiting can greatly exceed their counterparts, especially if threshold be reduced toward twice energy, which requires further increase efficiency. Finally, we discuss research challenges associated achieving maximum benefit since show mathematically related.
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