作者: Sergey V Gaponenko , Eduard Monaico , Vladimir V Sergentu , Sergey Ya Prislopski , Ion M Tiginyanu
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摘要: We report on anomalous light retroreflection from strongly absorbing nanoporous semiconductor materials, GaAs and InP, with polarized retroreflected linear polarization coinciding that of incident beams. The high waves suggests coherent backscattering as the underlying physical mechanism. This phenomenon resulting multiple scattering is supposed to be possible in an medium owing longitudinal electromagnetic generated at interfaces. Strong absorption for transverse has negligible effect ones therefore does not prevent their but ensures a refraction index promoting strong scattering. hypothesis supported by theoretical model calculations.