A comparison of direct Monte-Carlo and DOE simulations for optimising IC processes
作者： Xuewen Gan , A.J. Walton
DOI: 10.1109/ICSICT.1995.503369
关键词:
摘要: This paper presents a comparison of two approaches to predict response variation IC process. These are the direct approach using Monte Carlo process and device simulation use DOE techniques create surfaces from which distributions can be produced. The relative merits these discussed it is demonstrated that provided good fit obtained for surface agreement between methods good.
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