Microwave semiconductor device with via holes and associated structure
作者： Tomoji Hamada , Seiji Nishi
DOI:
关键词:
摘要: A semiconductor device for a microwave circuit includes substrate with an active element formed in the top surface, surface wirings on of which are connected to terminals element, and rear electrodes by via holes. structure device, dielectric has surface. The is fixed such that substrate.
google.mu参考文章(12)
Kazuhiko Honjo, Monolithic integrated circuit device ,(1991)
Richard L Palmquist, Rudolf R August, Monolithic heteroepitaxial microwave tunnel die ,(1971)
Masao Mochizuki, Microwave integrated circuit (MIC) having a reactance element formed on a groove ,(1995)
Victor Albert Keith Temple, Homer H. Ii Glascock, Hermetic package for a high power semiconductor device ,(1994)
Angus A. Rockett, Li-Chung Yang, Multi-phase back contacts for CIS solar cells ,(1993)
Mitsuharu Shimizu, Semiconductor device using a tape carrier ,(1990)
Henricus Godefridus Rafael Maas, Ronald Dekker, De Einden Wilhelmus Theodorus Antonius Johannes Van, Integrated microwave semiconductor device with active and passive components ,(1995)
Hiroaki Hachino, Yoko Wakui, Tasao Soga, Michio Ooue, Tomio Yasuda, Mamoru Sawahata, Semiconductor device having ribbon electrode structure and method for fabricating the same ,(1981)