Stacked microelectronic assembly with tsvs formed in stages with plural active chips
作者： Vage Oganesian , Piyush Savalia , Ilyas Mohammed , Craig Mitchell , Belgacem Haba
DOI:
关键词:
摘要: A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of elements, respectively, are juxtaposed, each the elements embodying active semiconductor devices. An element may extend within a opening extending from rear surface towards thereof, element, third through least one to contact pads. Interior openings directions relative define substantial angle.
google.de 参考文章(289)
Tanaka Naohiro, Onodera Akira, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD ,(2002)
Takai Nobuyuki, Tsukada Yuji, Suzuki Takuya, Semiconductor device and manufacturing method of the same ,(2006)
Ichise Masahiko, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD ,(2004)
真樹 岡部, Maki Okabe, Semiconductor device, and method of manufacturing same ,(2005)
Yoneda Haruki, Sasada Kazuhiro, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME ,(2010)
Lee Chung-Woo, Kim Jeong-Jin, Sohn Hai-Jeong, Song Young-Hee, Sai Ichiko, SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME ,(2008)
Masaru Kawakami, Semiconductor device and method for manufacturing same ,(2007)
Shibayama Katsumi, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD ,(2004)
Nagatomo Koji, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF ,(2009)
Hisanori Komai, 尚紀 駒井, 卓矢 中村, Takuya Nakamura, Method of manufacturing semiconductor device, and semiconductor device ,(2006)