Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

摘要: Vertically aligned ZnO nanorod array (NRA)-based ultraviolet (UV) photodetectors (PDs) were successfully fabricated and optimized via a facile hydrothermal process. Using shadow mask technique, the thin seed layer was deposited between patterned Au/Ti electrodes to bridge electrodes. Thus, both Au could be connected by layer. As sample immersed into growth solution heated at 90 °C, NRAs crystallized vertically grown on layer, thus creating metal-semiconductor-metal PD structure. To investigate size effect of photocurrent, PDs readily prepared with different concentrations solution. For 25 mM concentration, 10 μm channel width (i.e., gap distance two electrodes) exhibited high photocurrent 1.91 × 10−4 A an applied bias 10 V under 365 nm UV light illumination. The adjusting width. 15 μm width, relatively on-off ratio 37.4 good current transient characteristics observed same bias. These results are expected useful for cost-effective practical applications.