Semi-empirical calculations of hydrogen defects in silicon
作者： Vijay A. Singh , J.W. Corbett , C. Weigel , L.M. Roth
DOI: 10.1016/0375-9601(78)90169-X
关键词:
摘要: Abstract Calculations for hydrogen defect(s) in a monovacancy silicon cluster yield stable position this defect which: (a) does not saturate any of the dangling bonds; and (b) contributes level(s) gap whose implications remain to be understood.
harvard.edu
elsevier.com
sci-hub.se 参考文章(5)
Vijay A. Singh, C. Weigel, J. W. Corbett, L. M. Roth, Vibrational and Electronic Structure of Hydrogen-Related Defects in Silicon Calculated by the Extended Hückel Theory Physica Status Solidi B-basic Solid State Physics. ,vol. 81, pp. 637- 646 ,(1977) , 10.1002/PSSB.2220810227
R. P. Messmer, G. D. Watkins, Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in Diamond Physical Review B. ,vol. 7, pp. 2568- 2590 ,(1973) , 10.1103/PHYSREVB.7.2568
H. J. Stein, Bonding and thermal stability of implanted hydrogen in silicon Journal of Electronic Materials. ,vol. 4, pp. 159- 174 ,(1975) , 10.1007/BF02657842
W. E. Spear, P. G. Le Comber, S. Kinmond, M. H. Brodsky, Amorphous siliconp‐njunction Applied Physics Letters. ,vol. 28, pp. 105- 107 ,(1976) , 10.1063/1.88658
D. E. Carlson, C. R. Wronski, Amorphous silicon solar cell Applied Physics Letters. ,vol. 28, pp. 671- 673 ,(1976) , 10.1063/1.88617