Modeling of GaN-based heterostructure devices
作者： Fabio Sacconi , P. Lugli , A. Di Carlo , F. Della Sala
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摘要: Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation electrical characteristics AlGaN/GaN heterojunction field effect transistors through an optimized effective mass approach based self-consistent solution Schrodinger and Poisson equations coupled to a quasi-2D model for current flow.
参考文章(11)
P. Lugli, M. Paciotti, E. Calleja, E. Munoz, J. L. Sanchez-Rojas, F. Dessenne, R. Fauquembergue, J. L. Thobel, G. Zandler, HEMT Models and Simulations Springer, Dordrecht. pp. 141- 163 ,(1996) , 10.1007/978-94-009-1630-2_7
R. Oberhuber, G. Zandler, P. Vogl, Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors Applied Physics Letters. ,vol. 73, pp. 818- 820 ,(1998) , 10.1063/1.122011
A. Trellakis, A. T. Galick, A. Pacelli, U. Ravaioli, ITERATION SCHEME FOR THE SOLUTION OF THE TWO-DIMENSIONAL SCHRODINGER-POISSON EQUATIONS IN QUANTUM STRUCTURES Journal of Applied Physics. ,vol. 81, pp. 7880- 7884 ,(1997) , 10.1063/1.365396
Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Vincenzo Fiorentini, Fabio Bernardini, Doping screening of polarization fields in nitride heterostructures Applied Physics Letters. ,vol. 76, pp. 3950- 3952 ,(2000) , 10.1063/1.126831
Udayan V. Bhapkar, Michael S. Shur, Monte Carlo calculation of velocity-field characteristics of wurtzite GaN Journal of Applied Physics. ,vol. 82, pp. 1649- 1655 ,(1997) , 10.1063/1.365963
Vincenzo Fiorentini, Fabio Bernardini, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Reinhard Scholz, Jean-Marc Jancu, Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures Applied Physics Letters. ,vol. 74, pp. 2002- 2004 ,(1999) , 10.1063/1.123727
Y‐F Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, UK Mishra, None, VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS Applied Physics Letters. ,vol. 69, pp. 1438- 1440 ,(1996) , 10.1063/1.117607
Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides Physical Review B. ,vol. 56, pp. 10024- 10027 ,(1997) , 10.1103/PHYSREVB.56.R10024
Gérald Bastard, Joel Schulman, Wave Mechanics Applied to Semiconductor Heterostructures ,(1991)
M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger, Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. ,vol. 4, pp. 840- 845 ,(1999) , 10.1557/S1092578300003501