Self-catalyzed chemical vapor deposition method for the growth of device-quality metal thin films
作者： N. Bahlawane , P. Antony Premkumar , K. Onwuka , G. Reiss , K. Kohse-Höinghaus
DOI: 10.1016/J.MEE.2007.05.014
关键词:
摘要: Deposition of metals and alloys was demonstrated using thermal chemical vapor deposition starting from commercially available precursors in the absence molecular hydrogen. The adopted strategy relies solely on selective reactivity alcohols with metal complexes at temperature. In this report, particular interest given to growth nickel silver. This process allows optimization single hcp fcc phases Ni(acac)"2, whereas several silver allow crystalline structure Steady kinetics, without incubation time, noticed for all investigated precursors. electrical conductivity hcp-Ni, fcc-Ni fcc-Ag shows typical decay bulk value increased film thickness, temperature resistivity coefficients are similar corresponding material.
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