Silver metal organic chemical vapor deposition for advanced silver metallization
作者： L. Gao , P. Härter , Ch. Linsmeier , A. Wiltner , R. Emling
DOI: 10.1016/J.MEE.2005.07.078
关键词: Substrate (electronics) 、 Deposition (phase transition) 、 Thin film 、 Chemical vapor deposition 、 Metalorganic vapour phase epitaxy 、 Nanotechnology 、 Layer (electronics) 、 Materials science 、 Tin 、 Chemical engineering 、 Metallizing
摘要: The use of silver interconnects enables higher speed for silicon integrated circuits. formation Ag requires sequential deposition a continuous barrier layer followed by and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt"3) (hfac)Ag(VTES) the metal organic chemical vapor (MOCVD) on TiN adhesion were evaluated their characteristics was studied. It confirmed that could be deposited at substrate temperature as low 180^oC with (hfac)Ag(VTES). thin film precursor vaporization 50^oC 220-250^oC, resulting in resistivity around 1.8-2.0@m@Wcm.
core.ac.uk
mpg.de
acm.org
elsevier.com
sci-hub.se 参考文章(3)
M. Hauder, J. Gstöttner, W. Hansch, D. Schmitt-Landsiedel, Scaling properties and electromigration resistance of sputtered Ag metallization lines Applied Physics Letters. ,vol. 78, pp. 838- 840 ,(2001) , 10.1063/1.1345801
Dennis A Edwards, Mary F Mahon, Kieran C Molloy, Virginie Ogrodnik, Silver(I) aryloxide–triphenylphosphine complexes. An assessment of their potential as CVD precursors and the structure of [Ag(OC6H4Me-2)(PPh3)3]·2-MeC6H4OH·C6H5Me Inorganica Chimica Acta. ,vol. 349, pp. 37- 44 ,(2003) , 10.1016/S0020-1693(03)00077-X
R. Manepalli, F. Stepniak, S.A. Bidstrup-Allen, P.A. Kohl, Silver metallization for advanced interconnects IEEE Transactions on Advanced Packaging. ,vol. 22, pp. 4- 8 ,(1999) , 10.1109/6040.746536