Efficient method for fabricating optimal BiCMOS N-wells for bipolar and field effect transistors
作者： Chuen-Der Lien
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摘要: A BiCMOS process is provided for fabricating on the same semiconductor substrate three types of N-wells optimized respectively (i) PMOS FETs requiring low P+/N-well capacitance; (ii) NPN bipolar transistors which do not require collector-to-substrate capacitance and latch-up immunity; (iii) capacitance.
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