Semiconductor memory device having a plurality of bank sections distributed in a plurality of divided memory cell arrays
作者： Jung Won Suh
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摘要: A semiconductor memory device has a plurality of cell arrays with bank sections. Bank sections identified by different sequence numbers are operated independently each other. data bus lines transfer in order to write into desired section the and read from arrays. The same number selected simultaneously vertical horizontal selection signal.
lens.org 参考文章(13)
Yuji Watanabe, Multi-bank semiconductor memory device having common command detection ,(1994)
Satoru Takase, Masaki Ogihara, Kiyofumi Sakurai, Dynamic type memory ,(1995)
Barbara A. Chappell, Terry I. Chappell, Stanley E. Schuster, Pipelined memory chip structure having improved cycle time ,(1987)
Yong-sik Seok, Dong-Soo Jun, Jae-Gu Roh, Dong-Sun Min, Semiconductor memory device having a block selection function with low power consumptions ,(1992)
Masaki Tsukude, Yasuhiko Nitta, Synchronous semiconductor memory device having a plurality of banks distributed in a plurality of memory arrays ,(1996)
Atsushi Ohba, Semiconductor memory device reading/writing data of multiple bits internally ,(1991)
Tetsushi Tanizaki, Semiconductor memory device storing data and parity bit ,(1992)
Yoshihiro Takemae, Memory and method of reading out of the memory ,(1995)
Ejaz U. Hag, Interblock dispersed-word memory architecture ,(1991)
Cho Jun-Hyoung, Memory addressing method and memory device ,(1995)