High-resolution photoemission spectroscopy study of the single-domain Si ( 110 ) − 16 × 2 surface

摘要: We have investigated the valence band structure and $\mathrm{Si}\phantom{\rule{0.3em}{0ex}}2p$ photoemission spectra of single-domain $\mathrm{Si}(110)\text{\ensuremath{-}}16\ifmmode\times\else\texttimes\fi{}2$ surface with higher resolution than previous studies. found that highest occupied state, reported to be dispersive in studies, is resolved into two states flat energy dispersions. This reveals are not produced by Si $\ensuremath{\pi}$-bonded chains, as suggested but originate from building blocks spatially localized electronic structures such a tetramer adatom. line shapes show directly five components without any curve fitting. Various atomic models, especially adatom-tetramer-interstitial model, considered figure out atomistic origins states.