Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

作者: Jae-Seong Park , Jong Kyu Kim , Jaehee Cho , Tae-Yeon Seong

DOI: 10.1149/2.0111704JSS

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参考文章(150)
Hongtao Liu, Yunqi Liu, Daoben Zhu, Chemical doping of graphene Journal of Materials Chemistry. ,vol. 21, pp. 3335- 3345 ,(2011) , 10.1039/C0JM02922J
A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich, M. Kneissl, AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates Physica Status Solidi (a). ,vol. 210, pp. 451- 454 ,(2013) , 10.1002/PSSA.201200648
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho, Present status of InGaN/GaN/AlGaN-based laser diodes Journal of Crystal Growth. ,vol. 189, pp. 820- 825 ,(1998) , 10.1016/S0022-0248(98)00302-9
Yitao Liao, Christos Thomidis, Chen-kai Kao, Theodore D. Moustakas, AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. ,vol. 98, pp. 081110- ,(2011) , 10.1063/1.3559842
Hideki Hirayama, Noritoshi Maeda, Sachie Fujikawa, Shiro Toyoda, Norihiko Kamata, Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes Japanese Journal of Applied Physics. ,vol. 53, pp. 100209- 100209 ,(2014) , 10.7567/JJAP.53.100209
KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang, None, Mg acceptor level in AlN probed by deep ultraviolet photoluminescence Applied Physics Letters. ,vol. 83, pp. 878- 880 ,(2003) , 10.1063/1.1594833
Min-Ho Kim, Sung-Nam Lee, Chul Huh, Serng Yerl Park, Jeong Yeul Han, Jae Myung Seo, Seong-Ju Park, Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN Physical Review B. ,vol. 61, pp. 10966- 10971 ,(2000) , 10.1103/PHYSREVB.61.10966
Dong Yeong Kim, Jun Hyuk Park, Jong Won Lee, Sunyong Hwang, Seung Jae Oh, Jungsub Kim, Cheolsoo Sone, E Fred Schubert, Jong Kyu Kim, None, Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission Light-Science & Applications. ,vol. 4, ,(2015) , 10.1038/LSA.2015.36
Sergey Yu. Karpov, Yuri N. Makarov, Dislocation effect on light emission efficiency in gallium nitride Applied Physics Letters. ,vol. 81, pp. 4721- 4723 ,(2002) , 10.1063/1.1527225
Byung-Jae Kim, Chongmin Lee, Younghun Jung, Kwang Hyeon Baik, Michael A Mastro, Jennifer K Hite, Charles R Eddy, Jihyun Kim, None, Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Applied Physics Letters. ,vol. 99, pp. 143101- ,(2011) , 10.1063/1.3644496