III-nitride blue microdisplays
作者： HX Jiang , SX Jin , J Li , J Shakya , JY Lin
DOI: 10.1063/1.1351521
关键词:
摘要: Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5 mm2 and consists 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L–I) characteristic, viewing angle, uniformity measured. Due to the unique III-nitride wide-band-gap semiconductors, III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide angles, full-color spectrum capability, long life, speed, low-power consumption, thus providing an enhancement benefit present capabilities miniature display systems.
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