Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties

摘要: Abstract High quality pure phase VO2 films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO2/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed valence state of vanadium (V) principally composed V4+ trace amount V5+, no other V detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) transition resistance change up to nearly three orders magnitude temperature dependent electrical measurement, which comparable high film grown directly sapphire substrates. Our present findings will give deeper insight into physical mechanism behind exotic characteristics VO2/p-GaN heterostructure, further motivate research novel devices combined functional properties both correlated oxide wide bandgap nitride semiconductors.