N-VO2/p-NiO-based heterogeneous structure and preparation method thereof
作者： Wang Gang , Song Shiwei , Ding Yanbo , Wang Jian , Zhao Yan
DOI:
关键词:
摘要: The invention relates to an n-VO2/p-NiO-based heterogeneous structure and a preparation method thereof. comprises TiN film, first AZO transparent conductive VO2 p-NiO second film flexible stainless steel substrate which are sequentially distributed from top bottom, wherein the is buffer layer, protective both serve as electrode slowing layer. With adopted, n-VO2/P-NiO heterostructure can be combined with material, high-power device prepared; has bright application prospect in photoelectric switches, low-cost optical storage devices, like; low power long service life.
lens.org 参考文章(7)
You Zhou, Shriram Ramanathan, Zheng Yang, Electrically-driven phase transitions in functional oxide heterostructures ,(2013)
Jiming Bian, Minhuan Wang, Lihua Miao, Xiaoxuan Li, Yingmin Luo, Dong Zhang, Yuzhi Zhang, Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties Applied Surface Science. ,vol. 357, pp. 282- 286 ,(2015) , 10.1016/J.APSUSC.2015.08.263
Shriram Ramanathan, Changhun Ko, Electric field induced phase transitions and dynamic tuning of the properties of oxide structures ,(2009)
Byung Gyu Chae, Yong Sik Lim, Kwang Yong Kang, Gyungock Kim, Sunglyul Maeng, Hyun Tak Kim, Doo Hyeb Youn, Seong Hyun Kim, 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material ,(2004)
Alok Gupta, Jagdish Narayan, Titas Dutta, Near bulk semiconductor to metal transition in epitaxial VO2 thin films Applied Physics Letters. ,vol. 97, pp. 151912- ,(2010) , 10.1063/1.3503632
Yeonjoon Park, Sang Hyouk Choi, Double sided si(ge)/sapphire/iii-nitride hybrid structure ,(2014)
Yuan Huiping, Wang Fei, Wang Jining, Wang Shumao, Jiang Lijun, Liu Xiaopeng, Amorphous silicon germanium thin-film solar cell having double-layer interface band gap buffer layer ,(2016)