作者: Shao-Yu Chu , Meng-Xian Shen , Tsung-Han Yeh , Chia-Hsun Chen , Ching-Ting Lee
DOI: 10.3390/S20216159
关键词:
摘要: In this work, Ga 2 O 3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O 2 ) plasma. …