Synthesis and characterization of 3C-SiC nanowires
作者： G. Attolini , F. Rossi , M. Bosi , B.E. Watts , G. Salviati
DOI: 10.1016/J.JNONCRYSOL.2008.05.064
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摘要: … Planar defects, as stacking faults and rotational twins, are present on (1 1 1) planes. The formation of short thick rods or long thin wires, depending on the growth temperature and time, …
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