Simple approximations for degenerate non-parabolic semiconductors
作者： V. Altschul , G. Bahir , E. Finkman
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摘要: The authors propose simple, explicit expressions that describe properties of semiconductor devices with nonparabolic energy bands. new model includes effects carrier degeneracy and impurity freeze-out. approach is based on a recently proposed approximation for the statistics derived from Kane's k.p model. use to calculate intrinsic semiconductors, n.p product, Einstein relation. They then solve one-dimensional Poisson's equation obtain relationship between total charge surface potential. This method can be applied heterojunction field effect wide narrow band gaps. incremental capacitance an MIS structure compare results accurate numerical experimental measurements HgCdTe capacitor. >
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