Cryogenic dry etching for high aspect ratio microstructures
作者： K. Murakami , Y. Wakabayashi , K. Minami , M. Esashi
DOI: 10.1109/MEMSYS.1993.296953
关键词:
摘要: Cryogenic reactive ion etching (RIE) has been used to fabricate microstructures. The cryogenic system a cathode stage that is temperature controlled from 0 -140 degrees C. A magnetic field and narrow gap between electrodes are introduced increase plasma density. behavior of silicon polyimide film investigated. Directional was achieved at low temperature. etch rate increased by using Sm-Co permanent magnets also high flow the gas under constant pressure. In case wafer etching, maximum 1.6 mu m/min with normalized side less than 0.02 -120 Etching selectivity over 900 power density 4.0 W/cm/sup 2/. 0.01 an 0.8 -100 RIE can be 3-D structures aspect ratio. >
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sci-hub.se 参考文章(2)
M. Yamaguchi, S. Kawamura, K. Minami, M. Esashi, Distributed electrostatic micro actuator international conference on micro electro mechanical systems. pp. 18- 23 ,(1993) , 10.1109/MEMSYS.1993.296944
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