Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
作者： F. Marty , L. Rousseau , B. Saadany , B. Mercier , O. Français
DOI: 10.1016/J.MEJO.2005.04.039
关键词:
摘要: Abstract Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or isotropic of silicon. On one hand, high aspect ratio microstructures with up to 107 were obtained on sub-micron trenches. Application photonic MEMS is presented. Isotropic also used alone in combination anisotropic realize various 3D shapes.
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