作者: Iva Matolínová , Slavomír Nemšák , Miloš Cabala , Nataliya Tsud , Jana Poltierová‐Vejpravová
DOI: 10.1111/J.1551-2916.2011.04704.X
关键词:
摘要: Aluminum oxide structures were grown on Cu–9 at.%Al(111) single crystals. Usually alumina grows in the form of an epitaxial thin film. The process is based Al atom segregation and subsequent oxidation topmost surface. Strong temperature dependence growth mode was observed during a Cu–9 at.%Al crystal. In this work we have reported for first time formation wire-like nanostructures substrate surface high-temperature at low pressure. nanowire annealing 1070 K while 910 K led to flat continuous layer. Morphology, chemical composition, structure characterization prepared done by means scanning electron microscopy, energy-dispersive X-ray spectroscopy, photoelectron diffraction. experimental results point Θ phase nanowires due atoms. Mechanism nanostructure discussed. experiment clearly showed that can be obtained bottom-up with mass transfer from assembled nanostructure.