Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions
作者： X. L. Tong , D. S. Jiang , L. Liu , H. Dai
DOI: 10.1116/1.2956631
关键词:
摘要: GaN thin films have been grown by femtosecond and nanosecond pulsed laser depositions (PLDs), respectively. X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, fluorescence spectra, scanning electronic microscope (SEM), field emission measurements were carried out to analyze the crystalline structure, morphology, optical properties, characteristics of deposited films. Although both PLD polycrystalline hexagonal, quality properties found be different. The SEM image polymer microtips array coated with film is considerably different from that PLD. A distortion in shape can seen PLD, which has related differences laser-target interaction as well plume during prope...
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