The influences of laser scanning speed on the structural and optical properties of thin GaN films separated from sapphire substrates by excimer laser lift-off
作者： X L Tong , L Li , D S Zhang , Y T Dai , D J Lv
DOI: 10.1088/0022-3727/42/4/045414
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摘要: … ) substrate because of hexagonal wurtzite structure and high growth temperature of GaN [3… the GaN films and the sapphire substrates, leading to high dislocation and crack densities in …
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