Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

作者: Young Ho Do , Min Gyu Kang , Jin Sang Kim , Chong Yun Kang , Seok Jin Yoon

DOI: 10.1016/J.SNA.2012.06.012

关键词:

摘要: Abstract The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5 Nb )O 3 –0.95Pb(Zr 0.52 Ti 0.48  + 0.7 wt.%Nb 2 O 5  + 0.5 wt.%MnO (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, investigated. PAN-PZT films coated with sacrificial layer, prevented or minimized damage during LLO process. structural and electrical the before after process demonstrated that crystallographic device retained Flexible layer may be for production electronic devices.

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