作者: Young Ho Do , Min Gyu Kang , Jin Sang Kim , Chong Yun Kang , Seok Jin Yoon
DOI: 10.1016/J.SNA.2012.06.012
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摘要: Abstract The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5 Nb )O 3 –0.95Pb(Zr 0.52 Ti 0.48 + 0.7 wt.%Nb 2 O 5 + 0.5 wt.%MnO (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, investigated. PAN-PZT films coated with sacrificial layer, prevented or minimized damage during LLO process. structural and electrical the before after process demonstrated that crystallographic device retained Flexible layer may be for production electronic devices.