Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results.

作者: K. Lepinay , F. Lorut , R. Pantel , T. Epicier

DOI: 10.1016/J.MICRON.2013.01.004

关键词:

摘要: Abstract A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The flow presented and first results obtained on a 28 nm FDSOI transistor are detailed. latter compared with 2D analysis demonstrate interest slice extraction all directions from large analyzed volume without any 3D overlap effect issues.

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