Methods for recess etching

摘要: Methods for recess etching are provided herein that advantageously improve lateral to vertical etch ratio requirements, thereby enabling deeper while maintaining relatively shallow depths. Such enhanced methods provide benefits numerous applications where depth ratios constrained or recesses cavities desired be formed. In some embodiments, a method of includes providing substrate having structure formed thereon; forming in the at least partially beneath using first process; selective passivation layer on substrate; and extending second process. The is generally regions adjacent but not within recess. processes may same different.