Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
作者： Kyung Min Kim , Byung Joon Choi , Cheol Seong Hwang
DOI: 10.1063/1.2748312
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摘要: … on Al 2 O 3 ∕ Ti O 2 and Al 2 O 3 ∕ Ti O 2 ∕ Al 2 O 3 multilayers that resistive switching in … at room temperature with biased top electrode (TE) and grounded bottom electrode (BE). The …
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