(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array
作者： Yong Cheol Shin , Jaewon Song , Kyung Min Kim , Byung Joon Choi , Seol Choi
DOI: 10.1063/1.2912531
关键词: Backward diode 、 Optoelectronics 、 Rectification 、 Rectangular potential barrier 、 Voltage 、 Diode 、 Schottky diode 、 Stack (abstract data type) 、 Step recovery diode 、 Materials science
摘要: A Schottky-type diode switch consisting of a Pt∕(In,Sn)2O3∕TiO2∕Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55eV) and low potential barrier at the TiO2∕Pt TiO2∕(In,Sn)2O3 junctions, respectively, constitute rectifying properties stacked structure. forward/reverse current ratio as ∼1.6×104 an applied voltage ∼1V. When Pt∕TiO2∕Pt connected this in series, there insignificant interference on function from under forward bias virtually no resistive switching reverse bias.
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sci-hub.se 参考文章(9)
B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition Journal of Applied Physics. ,vol. 98, pp. 033715- ,(2005) , 10.1063/1.2001146
Kyung Min Kim, Byung Joon Choi, Cheol Seong Hwang, Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films Applied Physics Letters. ,vol. 90, pp. 242906- ,(2007) , 10.1063/1.2748312
S. K. Choi, J. I. Lee, Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering Journal of Vacuum Science and Technology. ,vol. 19, pp. 2043- 2047 ,(2001) , 10.1116/1.1371326
M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D. H. Seo, I.-K. Yoo, I.-G. Baek, D.-S. Kim, I.-S. Byun, S.-H. Kim, I.-R. Hwang, J.-S. Kim, S.-H. Jeon, B. H. Park, A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories† Advanced Materials. ,vol. 19, pp. 73- 76 ,(2007) , 10.1002/ADMA.200601025
Kyung Min Kim, Byung Joon Choi, Doo Seok Jeong, Cheol Seong Hwang, Seungwu Han, Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes Applied Physics Letters. ,vol. 89, pp. 162912- ,(2006) , 10.1063/1.2361268
Y. Park, V. Choong, Y. Gao, B. R. Hsieh, C. W. Tang, Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy Applied Physics Letters. ,vol. 68, pp. 2699- 2701 ,(1996) , 10.1063/1.116313
Zhi-Min Dang, Sheng-Hong Yao, Hai-Ping Xu, Effect of tensile strain on morphology and dielectric property in nanotube/polymer nanocomposites Applied Physics Letters. ,vol. 90, pp. 012907- ,(2007) , 10.1063/1.2430633
Krzysztof Szot, Wolfgang Speier, Gustav Bihlmayer, Rainer Waser, Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Nature Materials. ,vol. 5, pp. 312- 320 ,(2006) , 10.1038/NMAT1614
M.-J. Lee, Y. Park, D.-S. Suh, E.-H. Lee, S. Seo, D.-C. Kim, R. Jung, B.-S. Kang, S.-E. Ahn, C. B. Lee, D. H. Seo, Y.-K. Cha, I.-K. Yoo, J.-S. Kim, B. H. Park, Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory Advanced Materials. ,vol. 19, pp. 3919- 3923 ,(2007) , 10.1002/ADMA.200700251