Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation.

摘要: Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing structures, continuous near 780 nm was demonstrated at room temperature an absorbed pump power threshold 230 mW. Single-transverse-mode- emission observed with measured beam propagation factors $M^{2}_{x}$ $M^{2}_{y}$ 1.5 1.2, respectively. An output 12.4 mW 1 W obtained coupler 4.6% transmission signal wavelength. Higher powers were in larger cross sections exhibiting multimode emission.