SEMICONDUCTOR MEMORY AND WRITING METHOD THEREFOR
作者： Nishihara Kiyohito
DOI:
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摘要: PROBLEM TO BE SOLVED: To suppress threshold fluctuation due to the influence of charges between adjacent cells which becomes conspicuous by size reduction cell size. SOLUTION: For writing method a semiconductor memory, memory is provided with floating gate type transistor comprising substrate 11; insulating film 12 formed on substrate; electrode FG film, and control CG, facing through cavity part; forming an electrical path conducting in part or making it vanish, capacitance controlled. COPYRIGHT: (C)2008,JPO&INPIT
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